• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Proposed is an injector (1), which is made of silicon and in processes, in particular processes in semiconductor technology, allows the introduction of treatment gas in process chambers. The injector (1) is designed as a tube (2), are provided in the outlet openings for the introduced into the process chamber treatment gas. In the tube (2), which serves as an injector 1, at least one gas flow channel (4) is provided. The profile of the tube serving as an injector (1) is non-circular, that is deviates from a circular profile, with elongated, triangular or star-shaped profile shapes are taken into consideration.
    公开号:AT518081A4
    申请号:T815/2015
    申请日:2015-12-22
    公开日:2017-07-15
    发明作者:Nadrag Enrico；Nadrag Walter
    申请人:Sico Tech Gmbh；
    IPC主号:
    专利说明:

    The invention relates to an injector having the features of the introductory part of patent claim 1.
    When manufacturing wafers, the wafers are placed in brackets (boats) and placed in treatment rooms (ovens) where they are treated with a gas.
    The treatment gas is introduced into the furnace via an injector, which is normally formed as a bent or angled, perforated tube made of quartz glass.
    The problem with the known quartz glass injectors is that deposits due to the treatment process on the quartz glass injector can break off due to thermal stresses (flakings) and can impair the proper production of wafers.
    The chipping causes particles which are undesirable in processes in the semiconductor industry.
    The invention has for its object to provide an injector available that does not cause the problems described.
    This object is achieved according to the invention with an injector having the feature of claim 1.
    Preferred and advantageous embodiments of the injector according to the invention are the subject of the claims.
    Since the injector according to the invention is designed as a tube made of silicon, there are no thermal stresses that could cause the flaking off of deposits (flakings). Moreover, with the injector according to the invention, the formation of deposits is prevented or at least reduced.
    The silicon injector according to the invention is not only a straight tube, but it may also be a bent or angled tube.
    In order to provide the silicon injector according to the invention with sufficient mechanical stability for its use in furnaces for treating wafers with treatment gas, even at elevated temperatures, the profile of the injector in one embodiment is other than circular.
    For example, the profile of the injector, in particular in cross section, be rectangular, oblong oval, triangular or star-shaped.
    The inventive design of the injector with its non-circular, so non-circular profile, it also allows to provide more than one cavity (channel) in the injector for the supply of treatment gas. Two channels have the advantage that alternatively different treatment gases can be supplied. If one of the channels is misplaced, the other channel may be used for supplying treatment gas into the furnace for treating wafers placed in boats.
    The term "profile" is understood in the present case to mean the external shape of the tube used according to the invention as an injector.
    As used herein, the term "out of round" includes all profiles which are non-circular in cross-section.
    Further details and features of the invention will become apparent from the following description of preferred embodiments with reference to the drawings. Show it:
    Fig. 1 to 7 in cross-section different profiles of serving as an injector tubes made of silicon.
    The injector 1 according to the invention, which is made of silicon, is designed as a tube which can be straight, bent or angled (for example by 85-95 °).
    In the embodiment of an injector 1 made of silicon shown in FIG. 1, the tube 2 has a substantially rectangular profile with convexly curved narrow surfaces 3. In the tube 2, a channel 4 is provided with a circular cross-section.
    In the embodiment shown in Fig. 2, the profile of the tube 2 forming the injector 1 is rectangular.
    In Fig. 3, an embodiment of a serving as an injector 1 tube 2 is shown, in which two channels 4 are provided. The profile of the tube 2 is elongated, wherein the narrow surfaces 3 of the tube, which are curved in a convex manner, pass over rounded portions 5 into the side surfaces 6 of the tube.
    Fig. 4 shows a tube 2, which can be used as an injector 1, whose profile is similar to the profile shown in Fig. 3, wherein in the tube 2 a cross-sectionally elongated channel 4 is provided.
    5 shows a modification of the embodiment of a pipe 2 shown in FIG. 2, which can be used as an injector 1, in which bulges 7 are provided in the region of the channel 4 in the side surfaces β of the pipe. The profile of the tube 2 shown in Fig. 5 can also be understood as that of a circular tube with two ribs.
    Fig. 6 shows an embodiment of a tube 2, which can be used as an injector 1, in which the profile of the tube 2 is an equilateral triangle. As an alternative to an equilateral triangle, the profile of the tube 2 may be an isosceles or any triangle.
    Fig. 7 shows an embodiment of a tube 2, which can be used as an injector 1, wherein the tube 2 comprises a base body with a circular cross section, whose outer surface is formed concentrically to the channel 4 in the tube 2. In the embodiment of the embodiment shown, stiffening ribs 8 protrude from the circular base body to the outside, so that a star-shaped profile is present. The number of stiffening ribs 8 does not have to be four, but can also be two (see Fig. 5) or three or more than four.
    When using an injector 1 of silicon according to the invention in processes in which treatment gas is introduced into a process chamber, in particular in semiconductor technology in the production of wafers containing chips, there is no longer the problem, unlike known injectors made of quartz glass the emergence of particles (flakings).
    In particular, it has also proved to be advantageous that fewer impurities and particle formation occur when using injectors 1 according to the invention.
    Another advantage of the injector 1 according to the invention is its prolonged duration of use and, in addition, that the treatment process becomes cleaner.
    Due to the outer shape of the profile of the tube 2 used as an injector 1, which is not circular, the stability of the injector 1 is increased.
    As already mentioned and shown for example in FIG. 3, if necessary, several, for example two, three or more than three channels 4 for the supply of treatment gas can be provided in the tube 2 used as the injector 1.
    Although not shown in the drawings, in the inventively used as injectors 1 tubes 2, the usual for injectors made of quartz glass outlet openings for the treatment gas (process gas) are provided.
    In summary, an embodiment of the invention can be described as follows:
    Proposed is an injector 1, which is made of silicon and which allows in processes, in particular processes in semiconductor technology, the introduction of treatment gas in process chambers. The injector 1 is designed as a tube 2, are provided in the outlet openings for the introduced into the process chamber treatment gas. In the tube 2, which serves as an injector 1, at least one gas flow channel 4 is provided. The profile of the pipe serving as the injector 1 is non-circular, thus deviates from a circular profile, wherein elongated, triangular or star-shaped profile shapes are taken into consideration.
    权利要求:
    Claims (13)
    [1]
    claims:
    An injector (1) for supplying treatment gas into a process chamber, comprising a pipe (2) in which outlet openings for the treatment gas are provided, characterized in that the pipe (2) serving as the injector (1) consists of silicon.
    [2]
    2. An injector according to claim 1, characterized in that in the tube (2) at least one gas flow channel (4) is provided.
    [3]
    3. An injector according to claim 2, characterized in that in the tube (2) has two gas flow channels (4) which are arranged to extend parallel to each other, are provided.
    [4]
    4. Injector according to one of claims 1 to 3, characterized in that the profile of the injector (1) serving as pipe (2) is non-circular.
    [5]
    5. An injector according to claim 4, characterized in that the profile of the injector (1) serving pipe (2) is rectangular.
    [6]
    6. An injector according to claim 5, characterized in that the narrow sides (3) of the tube (2) are convexly curved.
    [7]
    7. An injector according to claim 5 or 6, characterized in that the narrow sides (3) of the tube (2) via bends (5) in the side surfaces (6) of the tube (2) pass.
    [8]
    8. Injector according to one of claims 1 to 4, characterized in that the injector (1) serving pipe (2) has a base body having a concentric with the channel (4) in the tube (2) curved profile, and that of Round body at least two ribs (8) protrude.
    [9]
    9. An injector according to claim 8, characterized in that the ribs (8) are provided diametrically opposite one another.
    [10]
    10. An injector according to claim 8 or 9, characterized in that exactly two ribs (8) are provided.
    [11]
    11. An injector according to claim 8 or 9, characterized in that three, four or more than four ribs (8) are provided.
    [12]
    12. Injector according to one of claims 1 to 4, characterized in that the injector (1) serving pipe (2) has a triangular profile.
    [13]
    13. Injector according to one of claims 2 to 12, characterized in that the gas flow channel (4) has an elongated cross-sectional shape.
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    EP3394317A1|2018-10-31|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATA815/2015A|AT518081B1|2015-12-22|2015-12-22|Injector made of silicon for the semiconductor industry|ATA815/2015A| AT518081B1|2015-12-22|2015-12-22|Injector made of silicon for the semiconductor industry|
    DE212016000248.1U| DE212016000248U1|2015-12-22|2016-12-19|Injector made of silicon for the semiconductor industry|
    JP2018552122A| JP2019503086A|2015-12-22|2016-12-19|Silicon injector for the semiconductor industry|
    US16/065,227| US20190055652A1|2015-12-22|2016-12-19|Injector of silicon for the semiconductor industry|
    PCT/EP2016/081788| WO2017108714A1|2015-12-22|2016-12-19|Injector of silicon for the semiconductor industry|
    KR1020187020897A| KR20180095073A|2015-12-22|2016-12-19|Silicon injector for the semiconductor industry|
    EP16816680.9A| EP3394317A1|2015-12-22|2016-12-19|Injector of silicon for the semiconductor industry|
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